Integrated circuit package configurations to reduce stiffness

ABSTRACT

Embodiments of the present disclosure are directed towards an integrated circuit (IC) package including a die having a first side and a second side disposed opposite to the first side. The IC package may further include an encapsulation material encapsulating at least a portion of the die and having a first surface that is adjacent to the first side of the die and a second surface disposed opposite to the first surface. In embodiments, the second surface may be shaped such that one or more cross-section areas of the IC package are thinner than one or more other cross-section areas of the IC package. Other embodiments may be described and/or claimed.

FIELD

Embodiments of the present disclosure generally relate to the field ofintegrated circuits, and more particularly, to integrated circuitpackage configurations to reduce stiffness and increase reliability ofpackage connections.

BACKGROUND

Integrated circuit (IC) packages are composed of a number of differentmaterials. These materials may vary from material contained in a die tomolding material to various metals contained in electrical routingfeatures and interconnect structures, to name a few. To furthercomplicate this, a package substrate or circuit board, to which an ICpackage may be coupled, may also be composed of an array of materials.Each of these materials, in an IC package, a package substrate, or acircuit board, may have varying coefficients of thermal expansion. Acoefficient of thermal expansion represents the change in volume amaterial may experience based upon a change in temperature of thematerial. Because materials contained in an IC package, packagesubstrate, or circuit board may have different coefficients of thermalexpansion, as the temperature of the various materials change thestresses imposed on the IC package, package substrate, or circuit boardmay change as well. These stresses may be especially apparent at thelocation where the IC package couples with a package substrate orcircuit board because the location of the coupling may be subject to thestresses of both the IC package and of the package substrate or circuitboard to which the IC package is coupled. As a result, the coupling maybe a point of failure when the stresses surpass what the coupling iscapable of enduring.

The background description provided herein is for the purpose ofgenerally presenting the context of the disclosure. Unless otherwiseindicated herein, the materials described in this section are not priorart to the claims in this application and are not admitted to be priorart by inclusion in this section.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments will be readily understood by the following detaileddescription in conjunction with the accompanying drawings. To facilitatethis description, like reference numerals designate like structuralelements. Embodiments are illustrated by way of example and not by wayof limitation in the figures of the accompanying drawings. Unlessclearly indicated otherwise, these drawings are not to scale.

FIG. 1 schematically illustrates a cross-section side view of an exampleintegrated circuit (IC) assembly including an IC package electricallyand physically coupled with circuit board in both an unstressed stateand a stressed state, in accordance with embodiments of the presentdisclosure.

FIG. 2 schematically illustrates a cross-section side view of an exampleintegrated circuit (IC) assembly having a stepped edge, in accordancewith some embodiments of the present disclosure.

FIG. 3 schematically illustrates a cross-section side view of an exampleintegrated circuit (IC) assembly having a beveled, or chamfered, edge inaccordance with some embodiments of the present disclosure.

FIG. 4 schematically illustrates a cross-section side view of an exampleintegrated circuit (IC) assembly having trenches integrated therein, inaccordance with some embodiments of the present disclosure.

FIGS. 5-7 illustrate top down views of various trench orientations, inaccordance with some embodiments of the present disclosure.

FIG. 8 schematically illustrates a cross-section side view of an exampleintegrated circuit (IC) assembly with trenches having various depthsintegrated therein, in accordance with some embodiments of the presentdisclosure.

FIG. 9 is a graphical illustration representing the results of asimulated temperature cycling on board (TCoB) test utilizing anintegrated circuit (IC) package in accordance with some embodiments ofthe present disclosure.

FIG. 10 is an illustrative flow diagram of an integrated circuit packagefabrication process in accordance with some embodiments of the presentdisclosure.

FIG. 11 is an illustrative cross-section view of selected operationsillustrating stages in the integrated circuit package fabricationprocess described in FIG. 10, in accordance with some embodiments of thepresent disclosure.

FIG. 12 schematically illustrates a computing device that includes anintegrated circuit package, in accordance with some embodiments of thepresent disclosure.

DETAILED DESCRIPTION

Embodiments of the present disclosure describe integrated circuitpackage configurations to reduce stiffness and increase reliability ofpackage connections. For example, techniques and configurationsdescribed herein may be directed towards integrated circuit packageshaving one or more cross-section areas that are thinner than one or moreother cross-section areas. In the following description, various aspectsof the illustrative implementations will be described using termscommonly employed by those skilled in the art to convey the substance oftheir work to others skilled in the art. However, it will be apparent tothose skilled in the art that embodiments of the present disclosure maybe practiced with only some of the described aspects. For purposes ofexplanation, specific numbers, materials and configurations are setforth in order to provide a thorough understanding of the illustrativeimplementations. However, it will be apparent to one skilled in the artthat embodiments of the present disclosure may be practiced without thespecific details. In other instances, well-known features are omitted orsimplified in order not to obscure the illustrative implementations.

In the following detailed description, reference is made to theaccompanying drawings which form a part hereof, wherein like numeralsdesignate like parts throughout, and in which is shown by way ofillustration embodiments in which the subject matter of the presentdisclosure may be practiced. It is to be understood that otherembodiments may be utilized and structural or logical changes may bemade without departing from the scope of the present disclosure.Therefore, the following detailed description is not to be taken in alimiting sense, and the scope of embodiments is defined by the appendedclaims and their equivalents.

For the purposes of the present disclosure, the phrase “A and/or B”means (A), (B), or (A and B). For the purposes of the presentdisclosure, the phrase “A, B, and/or C” means (A), (B), (C), (A and B),(A and C), (B and C), or (A, B and C).

The description may use perspective-based descriptions such astop/bottom, in/out, over/under, and the like. Such descriptions aremerely used to facilitate the discussion and are not intended torestrict the application of embodiments described herein to anyparticular orientation.

The description may use the phrases “in an embodiment,” or “inembodiments,” which may each refer to one or more of the same ordifferent embodiments. Furthermore, the terms “comprising,” “including,”“having,” and the like, as used with respect to embodiments of thepresent disclosure, are synonymous.

The term “coupled with,” along with its derivatives, may be used herein.“Coupled” may mean one or more of the following. “Coupled” may mean thattwo or more elements are in direct physical or electrical contact.However, “coupled” may also mean that two or more elements indirectlycontact each other, but yet still cooperate or interact with each other,and may mean that one or more other elements are coupled or connectedbetween the elements that are said to be coupled with each other. Theterm “directly coupled” may mean that two or more elements are in directcontact.

In various embodiments, the phrase “a first feature formed, deposited,or otherwise disposed on a second feature,” may mean that the firstfeature is formed, deposited, or disposed over the second feature, andat least a part of the first feature may be in direct contact (e.g.,direct physical and/or electrical contact) or indirect contact (e.g.,having one or more other features between the first feature and thesecond feature) with at least a part of the second feature.

As used herein, the term “module” may refer to, be part of, or includean Application Specific Integrated Circuit (ASIC), an electroniccircuit, a system-on-chip (SoC), a processor (shared, dedicated, orgroup) and/or memory (shared, dedicated, or group) that execute one ormore software or firmware programs, a combinational logic circuit,and/or other suitable components that provide the describedfunctionality.

FIG. 1 schematically illustrates a cross-section side view of an exampleintegrated circuit (IC) assembly including IC package 102 electricallyand physically coupled with circuit board 116 in both an unstressedstate 100 and a stressed state 118, in accordance with embodiments ofthe present disclosure. In embodiments, the IC package 102 may includeone or more dies (e.g. die 106) at least partially encapsulated in anencapsulation material 104. In some embodiments, IC package 102 may havea redistribution layer 112. Redistribution layer 112 may be configuredto electrically couple die 106 with one or more interconnect structures(e.g., solder balls 114). The interconnect structures may be configuredto electrically and physically couple IC package 102 with a packagesubstrate or circuit board (e.g., circuit board 116). The IC package 102may be attached to circuit board 116 according to a variety of suitableconfigurations including a flip configuration or wirebondingconfiguration. While depicted herein as solder balls 114, interconnectstructures may include pillars, or other suitable structures in placeof, or in addition to, solder balls 114 that may electrically couple theIC package 102 with circuit board 116. The IC package 102 may representa discrete chip made from a semiconductor material and may be, include,or be a part of a processor, memory, or ASIC in some embodiments.

In some embodiments encapsulation material 104 may be a moldingcompound. As mentioned above, the encapsulation material 104 mayencapsulate at least a portion of die 106 and may form a first surfaceS1, upon which redistribution layer 112 may be disposed and a secondsurface S2, opposite S1, which may also form a surface of IC package102. In embodiments, surface S2 may be shaped such that one or morecross sectional areas of IC package 102 may be thinner than one or moreother cross sectional areas of IC package 102. In embodiments, thethinner cross sectional area may be formed in an area between aterminating edge of die 106 and a terminating edge of IC package 102,this area is depicted by arrow 120. These thinner cross sectional areasmay reduce the rigidity of IC package 102 and, as a result, may reducethe stress imposed on IC package 102, including the stress imposed onthe interconnect structures coupling IC package 102 to circuit board116. In some embodiments, surface S2 may have trenches 108 and 110formed therein to realize the thinner cross-section areas. Trenches 108and 110 may be configured to reduce the rigidity of the package butmaintain sufficient rigidity for package placement.

Circuit board 116 may include electrical routing features configured toroute electrical signals to or from IC package 102. The electricalrouting features may include, for example, traces disposed on one ormore surfaces of the circuit board and/or internal routing features suchas, for example, trenches, vias or other interconnect structures throughwhich to route electrical signals.

The circuit board 116 may be a printed circuit board (PCB) composed ofan electrically insulative material such as an epoxy laminate. Forexample, the circuit board 116 may include electrically insulatinglayers composed of materials such as, for example,polytetrafluoroethylene, phenolic cotton paper materials such as FlameRetardant 4 (FR-4), FR-1, cotton paper and epoxy materials such as CEM-1or CEM-3, or woven glass materials that are laminated together using anepoxy resin prepreg material. The circuit board 116 may be composed ofother suitable materials in other embodiments. In some embodiments, thecircuit board 116 may be a motherboard (e.g., motherboard 1202 of FIG.12).

In some embodiments, IC package 102 may be coupled with a packagesubstrate and the package substrate may in turn be coupled to a circuitboard, such as circuit board 116. In such embodiments, package-levelinterconnects such as, for example, solder balls or land-grid array(LGA) structures may be coupled to one or more lands on the packagesubstrate and one or more pads on circuit board 116 to formcorresponding solder joints that are configured to further route theelectrical signals between the package substrate and circuit board 116.Other suitable techniques to physically and/or electrically couple apackage substrate with circuit board 116 may be used in otherembodiments.

In embodiments, such as when voltage is applied to IC package 102, thetemperature of the material contained within IC package 102 and circuitboard 116 may increase and as a result the material contained with theIC package 102 and circuit board 116 may expand or contract in a mannerconsistent with a coefficient of thermal expansion of the material. Thisexpansion or contraction of the individual materials may result in anamount of stress experienced by IC package 104, circuit board 116, andsolder balls 114. This stress is demonstrated by the flexing of ICpackage 102 and circuit board 116 in stressed state 118. In such astressed state, the areas of IC package 102 that have been made thinner(e.g., trenches 108 and 110) may reduce the rigidity of the of ICpackage 102 and consequently reduce the stress imposed on IC package102, circuit board 116, and solder balls 114.

FIG. 2 schematically illustrates a cross-section side view of an exampleintegrated circuit (IC) assembly 200. In embodiments, IC package 202 mayinclude one or more dies (e.g. die 206) at least partially encapsulatedin an encapsulation material 204. In some embodiments, IC package 202may have a redistribution layer 210. Redistribution layer 210 may beconfigured to electrically couple die 206 with one or more interconnectstructures (e.g., solder balls 212). The interconnect structures may beconfigured to electrically and physically couple IC package 202 with apackage substrate or circuit board (e.g., circuit board 214). The ICpackage 202 may be attached to circuit board 214 according to a varietyof suitable configurations including, a flip configuration orwirebonding configuration. While depicted herein as solder balls 212,interconnect structures may include pillars, or other suitablestructures in place of, or in addition to, solder balls 212 that mayelectrically couple IC package 202 with circuit board 214. The ICpackage 202 may represent a discrete chip made from a semiconductormaterial and may be, include, or be a part of a processor, memory, orASIC in some embodiments.

In some embodiments encapsulation material 204 may be a moldingcompound. As mentioned above, the encapsulation material 204 mayencapsulate at least a portion of die 206 and may form a first surfaceS1, upon which redistribution layer 210 may be disposed and a secondsurface S2, opposite S1, which may also form a surface of IC package202. In embodiments, surface S2 may be shaped such that one or morecross sectional areas of IC package 202 may be thinner than one or moreother cross sectional areas of IC package 202. These thinner crosssectional areas may reduce the rigidity of IC package 202 and, as aresult, may reduce the stress imposed on IC package 202, including thestress imposed on the interconnect structures coupling IC package 202 tocircuit board 216, due to thermal expansion of the materials containedtherein. As depicted, surface S2 may have one or more steps (e.g., step208) formed therein to realize the thinner cross-section areas. Step 208may be configured to both reduce the rigidity of the package butmaintain sufficient rigidity for package placement. While depicted as asingles step, in other embodiments, any number of steps may be utilized.

FIG. 3 schematically illustrates a cross-section side view of an exampleintegrated circuit (IC) assembly 300. In embodiments, IC package 302 mayinclude one or more dies (e.g. die 306) at least partially encapsulatedin an encapsulation material 304. In some embodiments, IC package 302may have a redistribution layer 310. Redistribution layer 310 may beconfigured to electrically couple die 306 with one or more interconnectstructures (e.g., solder balls 312). The interconnect structures may beconfigured to electrically and physically couple IC package 302 with apackage substrate or circuit board (e.g., circuit board 314). The ICpackage 302 may be attached to circuit board 314 according to a varietyof suitable configurations including, a flip configuration or awirebonding configuration. While depicted herein as solder balls 312,interconnect structures may include pillars, or other suitablestructures in place of, or in addition to, solder balls 312 that mayelectrically couple IC package 302 with circuit board 314. The ICpackage 302 may represent a discrete chip made from a semiconductormaterial and may be, include, or be a part of a processor, memory, orASIC in some embodiments.

In some embodiments encapsulation material 304 may be a moldingcompound. As mentioned above, the encapsulation material 304 mayencapsulate at least a portion of die 306 and may form a first surfaceS1, upon which redistribution layer 310 may be disposed and a secondsurface S2, opposite S1, which may also form a surface of IC package302. In embodiments, surface S2 may be shaped such that one or morecross sectional areas of IC package 302 may be thinner than one or moreother cross sectional areas of IC package 302. These thinner crosssectional areas may reduce the rigidity of IC package 302 and, as aresult, may reduce the stress imposed on IC package 302, including thestress imposed on the interconnect structures coupling IC package 302 tocircuit board 316, due to thermal expansion of the materials containedtherein. In some embodiments, surface S2 may have one or more beveled,or chamfered, edges (e.g., bevel 308) formed therein to realize thethinner cross-section areas. Bevel 308 may be configured to both reducethe rigidity of the package but maintain sufficient rigidity for packageplacement. As used herein, a beveled edge may be an edge that intersectssurface S1 at an angle of less than 90 degrees and surface S2 at anangle of more than 90 degrees to form a slanted edge that lies in asingle plain. A cross-section of a beveled edge may be generallytrapezoidal in nature. A chamfered edge, on the other hand, may refer toan edge intersecting two adjacent sides resulting in an edge having twoor more planes. In embodiments, the adjacent sides may be perpendicularto one another resulting in a vertical plane formed by a first side, ahorizontal plane formed by a second side, and a slanted planeintersecting the two sides to create a chamfered profile.

FIG. 4 schematically illustrates a cross-section side view of an exampleintegrated circuit (IC) assembly 400. In embodiments, IC package 402 mayinclude one or more dies (e.g. die 406) at least partially encapsulatedin an encapsulation material 404. In some embodiments, IC package 402may have a redistribution layer 410. Redistribution layer 410 may beconfigured to electrically couple die 406 with one or more interconnectstructures (e.g., solder balls 412). The interconnect structures may beconfigured to electrically and physically couple IC package 402 with apackage substrate or circuit board (e.g., circuit board 414). The ICpackage 402 may be attached to circuit board 414 according to a varietyof suitable configurations including, a flip configuration, as depicted,or other configurations such as a wirebonding configuration. In the flipconfiguration, the IC package 402 may be attached to a surface ofcircuit board 414 using solder balls 412. While depicted herein assolder balls 412, interconnect structures may include pillars, or othersuitable structures in place of, or in addition to, solder balls 412that may electrically couple IC package 402 with circuit board 414. TheIC package 402 may represent a discrete chip made from a semiconductormaterial and may be, include, or be a part of a processor, memory, orASIC in some embodiments.

In some embodiments encapsulation material 404 may be a moldingcompound. As mentioned above, the encapsulation material 404 mayencapsulate at least a portion of die 406 and may form a first surfaceS1, upon which redistribution layer 410 may be disposed and a secondsurface S2, opposite S1, which may also form a surface of IC package402. In embodiments, surface S2 may be shaped such that one or morecross sectional areas of IC package 402 may be thinner than one or moreother cross sectional areas of IC package 402. These thinner crosssectional areas may reduce the rigidity of IC package 402 and, as aresult, may reduce the stress imposed on IC package 402, including thestress imposed on the interconnect structures coupling IC package 402 tocircuit board 416, due to thermal expansion of the materials containedtherein. In some embodiments, surface S2 may have trenches 408 formedtherein. In embodiments, trenches 408 may be formed such that thetrenches form a perimeter around die 406. Trenches 408 may be configuredto both reduce the rigidity of the package but maintain sufficientrigidity for package placement.

FIGS. 5-7 illustrate top down views of various trench orientations, inaccordance with some embodiments of the present disclosure. FIG. 5illustrates trenches 502 formed on IC package 500 to achieve the thinnercross sectional areas. In embodiments, trenches 502 may be formed suchthat the trenches form a perimeter around the embedded die. Thisperimeter may be formed in an area outside of a peripheral edge of thedie. Such a peripheral edge of the die is depicted by box 504. FIG. 6illustrates trenches 602 formed on IC package 600. In embodiments,trenches 602 may form a 45 degree angle with a first side of the ICpackage and may extend to intersect an adjacent side of the IC packageat a 45 degree angle. FIG. 7 illustrates trenches 702 formed on ICpackage 700. In embodiments, trenches may be formed extending from oneside of IC package 700 to an adjacent side of IC package 700 and mayintersect the one side and the adjacent side at varying angles. In someembodiments, all four trenches might have individually different anglesand in such embodiments may not form a square.

FIG. 8 schematically illustrates a cross-section side view of an exampleintegrated circuit (IC) assembly 800. In embodiments, IC package 802 mayinclude one or more dies (e.g. die 806) at least partially encapsulatedin an encapsulation material 804. In some embodiments, IC package 802may have a redistribution layer 810. Redistribution layer 810 may beconfigured to electrically couple die 806 with one or more interconnectstructures (e.g., solder balls 812). The interconnect structures may beconfigured to electrically and physically couple IC package 802 with apackage substrate or circuit board (e.g., circuit board 814). The ICpackage 802 may be attached to circuit board 814 according to a varietyof suitable configurations including, a flip configuration orwirebonding configuration. In the flip configuration, the IC package 802may be attached to a surface of circuit board 814 using solder balls812. While depicted herein as solder balls 812, interconnect structuresmay include pillars, or other suitable structures in place of, or inaddition to, solder balls 812 that may electrically couple IC package802 with circuit board 814. The IC package 802 may represent a discretechip made from a semiconductor material and may be, include, or be apart of a processor, memory, or ASIC in some embodiments.

In some embodiments encapsulation material 804 may be a moldingcompound. As mentioned above, the encapsulation material 804 mayencapsulate at least a portion of die 806 and may form a first surfaceS1, upon which redistribution layer 810 may be disposed and a secondsurface S2, opposite S1, which may also form a surface of IC package802. In embodiments, surface S2 may be shaped such that one or morecross sectional areas of IC package 802 may be thinner than one or moreother cross sectional areas of IC package 802. These thinner crosssectional areas may reduce the rigidity of IC package 802 and, as aresult, may reduce the stress imposed on IC package 802, including thestress imposed on the interconnect structures coupling IC package 802 tocircuit board 816, due to thermal expansion of the materials containedtherein. In some embodiments, surface S2 may have trenches 808 formedtherein. In embodiments, a plurality of trenches 808 may be formed atvarious depths to achieve the thinner cross-section areas. Trenches 808may be configured to reduce the rigidity of the package but maintainsufficient rigidity for package placement. In some embodiments, thesetrenches may have a metallic layer disposed thereon which may aid indissipation of heat from IC package 802.

FIG. 9 is a graphical illustration representing the results of asimulated temperature cycling on board (TCoB) test utilizing anintegrated circuit (IC) package in accordance with embodiments of thepresent disclosure. Graph 900 depicts the results of TCoB tests carriedout on an IC package utilizing trenches in the configuration, asdepicted in FIG. 5, above, to achieve the thinner cross-section areas.Line 902 represents the edge of the die in the IC package with respectto the placement of the balls in the ball grid array. Graph 900represents a 10×10 matrix of a corner section of a 20×20 ball grid arraydisposed on the IC package where each value represents a readingcorresponding with a single ball of the ball grid array.

The values in graph 900 represent the percentage gain of TCoB cyclesover a reference IC package having a uniform thickness. For example, ingraph 900 the percentage gain of 17.02 in block (C, 2) represents theball of the ball grid array that is located 2 positions in and 3positions down from the corner of the IC package. As can be seen, theballs towards the corners of the ball grid array experience a very largepercentage increase in the number of TCoB cycles that can be sustainedprior to failure over the reference IC package.

FIG. 10 is an illustrative flow diagram of an illustrative fan-out waferlevel packaging of integrated circuit packages in accordance with someembodiments of the present disclosure. FIG. 11 provides cross-sectionviews of selected operations illustrating stages in the IC packagesubstrate fabrication process 1000, in accordance with an illustrativeembodiment. As a result, FIG. 10 and FIG. 11 will be described inconjunction with one another. To aid in this description, the operationsperformed in FIG. 10 are referenced on the arrows moving from operationto operation in FIG. 11. In addition, not all reference numbers aredepicted in each operation in FIG. 11.

Process 1000 may begin at operation 1002 where one or more dies (e.g.,dies 1104 a-1104 c of FIG. 11, hereinafter “dies 1104”) may be coupledwith a carrier (e.g., carrier 1102 of FIG. 11). The dies 1104 may becoupled with the carrier 1102 by way of a bonding material (notdepicted), such as, for example, an adhesive, resin, or solder. Anadhesive may be any type of die bonding adhesive, such as an epoxyadhesive. In some embodiments, an adhesive may include metal particlessuspended in the adhesive to provide for thermal and or electricalconductivity. A resin may be, for example, a polyimide based resin or athermoplastic. In embodiments utilizing a solder, the solder mayinclude, for example, lead (Pb), gold (Au), silver (Ag), tin (Sn), orany combination thereof. In some embodiments, the material bonding dies1104 to the carrier 1102 may be selected to make debonding of dies 1104from the carrier 1102 more easily accomplished than with othermaterials.

In embodiments, carrier 1102 may be selected due to its coefficient ofexpansion to reduce or minimize expansion differences in the processflow. In embodiments, the carrier may be, for example, a glass orceramic carrier.

Dies 1104 may be, include, or be a part of a processor, memory, or ASICin some embodiments. While only three dies are depicted, this is merelyfor clarity and any suitable number of dies may be coupled with thecarrier without departing from the scope of this disclosure. Dies 1104may have die interconnect structures configured to electrically couplewith a package substrate or circuit board.

At operation 1004 dies 1104 may be encapsulated in an encapsulationmaterial 1106 such as a molding compound. While not depicted in FIG. 11,this operation may include shaping a surface of the encapsulationmaterial, such as surface S2 depicted in FIG. 11, to cause theencapsulation material to vary in thickness which may result in one ormore areas of a cross-section of the integrated circuit package beingthinner than one or more other areas of the cross-section. This may beaccomplished by applying a form, or cast, to stamp the molding compoundinto a shape, such as those described above. In other embodiments, themolding compound may be deposited by printing the molding compound overdies 1104 and carrier 1102. In such embodiments, the molding compoundmay be printed in a pattern resulting in one or more of the shapesdescribed above.

At operation 1006 carrier 1102 may be decoupled from the IC packagerevealing a planar side S1 that is adjacent to or substantially coplanarwith an exposed surface of dies 1104. As used herein, substantiallycoplanar is utilized to reflect that although the surface S1 and thesurface of dies 1104 may not be perfectly coplanar, the surfaces arewithin a degree of coplanarity that a redistribution layer may be formedover surface S1 and the exposed surface of dies 1004. At operation 1008one or more redistribution layers 1108 may be deposited over surface S1and the exposed surface of dies 1004. In embodiments, redistributionlayer 1108 may form a fan out area 1116.

At operation 1010, the encapsulation material may be shaped to cause theencapsulation material to vary in thickness which may result in one ormore areas of a cross-section of the integrated circuit package beingthinner than one or more other areas of the cross-section. This may beaccomplished through the utilization of a saw, laser, or other suitabledevice configured to remove a portion of the encapsulation material toshape the encapsulation material (e.g., trench 1110 of FIG. 11). In someembodiments where the encapsulation material is shaped at operation 1004operation 1010 may be unnecessary and may be omitted. In otherembodiments, operation 1010 may be carried out in addition to anyshaping of the encapsulation material to arrive at a combination of theshapes described above. For example, the encapsulation material may bestamped at operation 1004 to result in a beveled edge such as thatdepicted in FIG. 3, above, and, in addition, the encapsulation materialmay have trenches formed therein at operation 1010. In some embodiments,the IC package may undergo a backgrinding operation to thin theencapsulation material of the IC package prior to operation 1010. Insuch a backgrinding process, encapsulation material from side S2 may beremoved to thin the IC package down to a level even with a surface ofdies 1104. Then the thinned surface may be shaped at operation 1010 tocause the encapsulation material to vary in thickness which may resultin one or more areas of a cross-section of the integrated circuitpackage being thinner than one or more other areas of the cross-section.

At operation 1012, chips 1112 a-c may be separated through a singulationprocess. This may be accomplished utilizing a saw, laser, or othersuitable device. Then at operation 1014 interconnect structures (e.g.,solder balls 1114) may be formed on redistribution layer 1108.

Embodiments of the present disclosure may be implemented into a systemusing any suitable hardware and/or software to configure as desired.FIG. 12 schematically illustrates a computing device that includes an ICpackage as described herein, such as that depicted by FIGS. 1-8. Thecomputing device 1200 may house a board such as motherboard 1202. Themotherboard 1202 may include a number of components, including but notlimited to a processor 1204 and at least one communication chip 1206.The processor 1204 may be physically and electrically coupled to themotherboard 1202. In some implementations, the at least onecommunication chip 1206 may also be physically and electrically coupledto the motherboard 1202. In further implementations, the communicationchip 1206 may be part of the processor 1204.

Depending on its applications, computing device 1200 may include othercomponents that may or may not be physically and electrically coupled tothe motherboard 1202. These other components may include, but are notlimited to, volatile memory (e.g., DRAM), non-volatile memory (e.g.,ROM), flash memory, a graphics processor, a digital signal processor, acrypto processor, a chipset, an antenna, a display, a touchscreendisplay, a touchscreen controller, a battery, an audio codec, a videocodec, a power amplifier, a global positioning system (GPS) device, acompass, a Geiger counter, an accelerometer, a gyroscope, a speaker, acamera, and a mass storage device (such as hard disk drive, compact disk(CD), digital versatile disk (DVD), and so forth).

The communication chip 1206 may enable wireless communications for thetransfer of data to and from the computing device 1200. The term“wireless” and its derivatives may be used to describe circuits,devices, systems, methods, techniques, communications channels, etc.,that may communicate data through the use of modulated electromagneticradiation through a non-solid medium. The term does not imply that theassociated devices do not contain any wires, although in someembodiments they might not. The communication chip 1206 may implementany of a number of wireless standards or protocols, including but notlimited to Institute for Electrical and Electronic Engineers (IEEE)standards including Wi-Fi (IEEE 802.11 family), IEEE 802.16 standards(e.g., IEEE 802.16-2005 Amendment), Long-Term Evolution (LTE) projectalong with any amendments, updates, and/or revisions (e.g., advanced LTEproject, ultra mobile broadband (UMB) project (also referred to as“3GPP2”), etc.). IEEE 802.16 compatible BWA networks are generallyreferred to as WiMAX networks, an acronym that stands for WorldwideInteroperability for Microwave Access, which is a certification mark forproducts that pass conformity and interoperability tests for the IEEE802.16 standards. The communication chip 806 may operate in accordancewith a Global System for Mobile Communication (GSM), General PacketRadio Service (GPRS), Universal Mobile Telecommunications System (UMTS),High Speed Packet Access (HSPA), Evolved HSPA (E-HSPA), or LTE network.The communication chip 1206 may operate in accordance with Enhanced Datafor GSM Evolution (EDGE), GSM EDGE Radio Access Network (GERAN),Universal Terrestrial Radio Access Network (UTRAN), or Evolved UTRAN(E-UTRAN). The communication chip 1206 may operate in accordance withCode Division Multiple Access (CDMA), Time Division Multiple Access(TDMA), Digital Enhanced Cordless Telecommunications (DECT),Evolution-Data Optimized (EV-DO), derivatives thereof, as well as anyother wireless protocols that are designated as 3G, 4G, 5G, and beyond.The communication chip 806 may operate in accordance with other wirelessprotocols in other embodiments.

The computing device 1200 may include a plurality of communication chips1206. For instance, a first communication chip 1206 may be dedicated toshorter range wireless communications such as Wi-Fi and Bluetooth and asecond communication chip 1206 may be dedicated to longer range wirelesscommunications such as GPS, EDGE, GPRS, CDMA, WiMAX, LTE, Ev-DO, andothers.

The processor 1204 of the computing device 1200 may be an IC package(e.g., IC package 102 of FIG. 1) incorporated into an IC assembly. Forexample, the circuit board 116 of FIG. 1 may be a motherboard 1202 andthe processor 1204 may be an IC package 102 as described herein. Theprocessor 1204 and the motherboard 1202 may be coupled together usingpackage-level interconnects as described herein. The term “processor”may refer to any device or portion of a device that processes electronicdata from registers and/or memory to transform that electronic data intoother electronic data that may be stored in registers and/or memory.

The communication chip 1206 may be an IC package (e.g., IC package 102)incorporated into an IC assembly that may include a package substrate.In further implementations, another component (e.g., memory device orother integrated circuit device) housed within the computing device 1200may be an IC package (e.g., IC package 102) incorporated into an ICassembly.

In various implementations, the computing device 1200 may be a laptop, anetbook, a notebook, an ultrabook, a smartphone, a tablet, a personaldigital assistant (PDA), an ultra mobile PC, a mobile phone, a desktopcomputer, a server, a printer, a scanner, a monitor, a set-top box, anentertainment control unit, a digital camera, a portable music player,or a digital video recorder. In further implementations, the computingdevice 800 may be any other electronic device that processes data.

EXAMPLES

According to various embodiments, the present disclosure describes anumber of examples. Example 1 is an integrated circuit packagecomprising: a die having a first side and a second side disposedopposite to the first side; an encapsulation material encapsulating atleast a portion of the die and having a first surface that is adjacentto the first side of the die and a second surface disposed opposite tothe first surface, wherein the second surface is shaped such that one ormore cross-section areas of the IC package are thinner than one or moreother cross-section areas of the IC package.

Example 2 may include the subject matter of Example 1, wherein the shapeof the second surface reduces rigidity of the IC package.

Example 3 may include the subject matter of Example 2, wherein the oneor more cross-section areas of the IC package comprise a portion of theencapsulation material disposed external to a region over the diedefined by a peripheral edge of the die.

Example 4 may include the subject matter of Example 3, wherein thesecond surface slopes up from an edge of the portion of theencapsulation material such that the portion has a substantially beveledor chamfered profile.

Example 5 may include the subject matter of Example 3, wherein theportion of the encapsulation material has a step profile.

Example 6 may include the subject matter of Example 3, wherein thesecond surface has one or more trenches formed therein such that the oneor more cross-section areas of the IC package are thinner than the oneor more other cross-section areas of the IC package.

Example 7 may include the subject matter of Example 6, wherein the oneor more trenches are between a terminating edge of the die and acorresponding terminating edge of the IC package.

Example 8 may include the subject matter of Example 7, wherein the oneor more trenches comprise at least four trenches that form a perimeteraround the die.

Example 9 may include the subject matter of Example 8, wherein the fourtrenches intersect at substantially right angles.

Example 10 may include the subject matter of any one of Examples 1-9,wherein: the die includes flip-chip interconnect structures; and thefirst surface includes redistribution features that are electricallycoupled with the flip-chip interconnect structures; and theredistribution features form a fan out region of the IC package.

Example 11 is a method of assembling an integrated circuit packagecomprising: providing a die having a first side and a second sidedisposed opposite to the first side; depositing an encapsulationmaterial to encapsulate one or more surfaces of the die in theencapsulation material, the encapsulation material forming a firstsurface that is adjacent to the first side of the die and a secondsurface, opposite the first surface; and shaping the second surface ofthe encapsulation material to cause the encapsulation material to varyin thickness resulting in one or more areas of a cross-section of theintegrated circuit package being thinner than one or more other areas ofthe cross-section.

Example 12 may include the subject matter of Example 11, wherein shapingthe second surface of the encapsulation material comprises stamping thesecond surface of the encapsulation material to cause the encapsulationmaterial to vary in thickness.

Example 13 may include the subject matter of Example 11, wherein shapingthe second surface of the encapsulation material comprises selectivelyremoving encapsulation material from the second surface of theencapsulation material to cause the encapsulation material to vary inthickness.

Example 14 may include the subject matter of Example 11, wherein shapingthe second surface of the encapsulation material comprises shaping aportion of the second surface disposed external to a region over the diethat is defined by a peripheral edge of the die.

Example 15 may include the subject matter of Example 14, wherein shapingthe portion of the second surface comprises beveling or chamfering of anedge of the portion of the second surface.

Example 16 may include the subject matter of Example 14, wherein shapingthe portion of the second surface comprises forming one or more steps inthe portion of the second surface.

Example 17 may include the subject matter of any one of Examples 11-13,wherein shaping the second surface of the encapsulation materialcomprises forming one or more trenches in the second surface.

Example 18 may include the subject matter of Example 17, wherein formingone or more trenches comprises forming at least four trenches to form aperimeter around the die.

Example 19 is a package assembly comprising: an integrated circuit (IC)package including: a die having a plurality of input/output (I/O)interconnect structures, a first side and a second side disposedopposite to the first side; an encapsulation material encapsulating atleast a portion of the die and having a first surface that is adjacentto the first side of the die and a second surface disposed opposite tothe first surface, wherein the second surface is shaped such that one ormore cross-section areas of the IC package are thinner than one or moreother cross-section areas of the IC package; and a package substrateincluding a first side having one or more lands disposed thereon; and asecond side disposed opposite to the first side, the second side havingone or more electrical routing features disposed thereon, the electricalrouting features electrically coupled with the plurality of I/Ointerconnect structures.

Example 20 may include the subject matter of Example 19, wherein the ICpackage is a processor.

Example 21 may include the subject matter of Example 20, furthercomprising one or more of an antenna, a display, a touchscreen display,a touchscreen controller, a battery, an audio codec, a video codec, apower amplifier, a global positioning system (GPS) device, a compass, aGeiger counter, an accelerometer, a gyroscope, a speaker, or a cameracoupled with the circuit board, wherein the package assembly is part ofa laptop, a netbook, a notebook, an ultrabook, a smartphone, a tablet, apersonal digital assistant (PDA), an ultra mobile PC, a mobile phone, adesktop computer, a server, a printer, a scanner, a monitor, a set-topbox, an entertainment control unit, a digital camera, a portable musicplayer, or a digital video recorder.

Various embodiments may include any suitable combination of theabove-described embodiments including alternative (or) embodiments ofembodiments that are described in conjunctive form (and) above (e.g.,the “and” may be “and/or”). Furthermore, some embodiments may includeone or more articles of manufacture (e.g., non-transitorycomputer-readable media) having instructions, stored thereon, that whenexecuted result in actions of any of the above-described embodiments.Moreover, some embodiments may include apparatuses or systems having anysuitable means for carrying out the various operations of theabove-described embodiments.

The above description of illustrated implementations, including what isdescribed in the Abstract, is not intended to be exhaustive or to limitthe embodiments of the present disclosure to the precise formsdisclosed. While specific implementations and examples are describedherein for illustrative purposes, various equivalent modifications arepossible within the scope of the present disclosure, as those skilled inthe relevant art will recognize.

These modifications may be made to embodiments of the present disclosurein light of the above detailed description. The terms used in thefollowing claims should not be construed to limit various embodiments ofthe present disclosure to the specific implementations disclosed in thespecification and the claims. Rather, the scope is to be determinedentirely by the following claims, which are to be construed inaccordance with established doctrines of claim interpretation.

What is claimed is:
 1. An integrated circuit (IC) package comprising: adie having a first side and a second side disposed opposite to the firstside; and an encapsulation material encapsulating at least a portion ofthe die and having a first surface that is adjacent to the first side ofthe die and a second surface disposed opposite to the first surface;wherein the second surface has one or more trenches formed therein thathave a length as measured in a plane parallel to the second surface thatis greater than a width that is measured in a plane parallel to thesecond surface and perpendicular to the length such that one or morecross-section areas of the IC package as measured at a trench arethinner than one or more other cross-section areas of the IC package asmeasured at a portion of the IC package that does not intersect with atrench.
 2. The IC package of claim 1, wherein a shape of the secondsurface that includes the one or more trenches reduces rigidity of theIC package.
 3. The IC package of claim 2, wherein the one or morecross-section areas of the IC package comprise a portion of theencapsulation material disposed external to a region over the diedefined by a peripheral edge of the die.
 4. The IC package of claim 3,wherein the second surface slopes up from an edge of the portion of theencapsulation material such that the portion has a substantially beveledor chamfered profile.
 5. The IC package of claim 3, wherein the portionof the encapsulation material has a step profile.
 6. The IC package ofclaim 1, wherein the one or more trenches are between a terminating edgeof the die and a corresponding terminating edge of the IC package. 7.The IC package of claim 6, wherein the one or more trenches comprise atleast four trenches that form a perimeter around the die.
 8. The ICpackage of claim 7, wherein the four trenches intersect at substantiallyright angles.
 9. The IC package of claim 1, wherein: the die includesflip-chip interconnect structures; and the first surface includesredistribution features that are electrically coupled with the flip-chipinterconnect structures; and the redistribution features form a fan outregion of the IC package.
 10. A package assembly comprising: anintegrated circuit (IC) package including: a die having a plurality ofinput/output (I/O) interconnect structures, a first side and a secondside disposed opposite to the first side; and an encapsulation materialencapsulating at least a portion of the die and having a first surfacethat is adjacent to the first side of the die and a second surfacedisposed opposite to the first surface; wherein the second surface hasone or more trenches formed therein that have a length as measured in aplane parallel to the second surface that is greater than a width thatis measured in a plane parallel to the second surface and perpendicularto the length such that one or more cross-section areas of the ICpackage as measured at a trench are thinner than one or more othercross-section areas of the IC package as measured at a portion of the ICpackage that does not intersect with a trench; and a package substrateincluding a first side having one or more lands disposed thereon; and asecond side disposed opposite to the first side, the second side havingone or more electrical routing features disposed thereon, the electricalrouting features electrically coupled with the plurality of I/Ointerconnect structures.
 11. The package assembly of claim 10, whereinthe IC package is a processor.
 12. The package assembly of claim 11,further comprising one or more of an antenna, a display, a touchscreendisplay, a touchscreen controller, a battery, an audio codec, a videocodec, a power amplifier, a global positioning system (GPS) device, acompass, a Geiger counter, an accelerometer, a gyroscope, a speaker, ora camera coupled with the circuit board, wherein the package assembly ispart of a laptop, a netbook, a notebook, an ultrabook, a smartphone, atablet, a personal digital assistant (PDA), an ultra mobile PC, a mobilephone, a desktop computer, a server, a printer, a scanner, a monitor, aset-top box, an entertainment control unit, a digital camera, a portablemusic player, or a digital video recorder.
 13. The IC package of claim1, wherein the one or more trenches are unfilled.
 14. The packageassembly of claim 10, wherein the one or more trenches are unfilled.